Published December 2002
| Version v1
Journal article
Temperature dependence of the width of the deep-level band in silicon with a high concentration of defects
- 1. Lublin Technical University, 20-618 Lublin (Poland)
- 2. Belarussian State University, ul. Leningradskaya 14, Minsk, 220080 (Belarus)
Description
Temperature dependences of the peak location and the half-width of the absorption band related to neutral divacancies in the spectrum of Si irradiated with neutrons at a dose of 1019 cm-2 were studied. The results were analyzed in terms of the concept of the defect-level band, whose width depends on the degree of compensation and on temperature
Additional details
Identifiers
- DOI
- 10.1134/1.1529241;
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 36
- Journal Issue
- 12
- Journal Page Range
- p. 1326-1331
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35051954
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data, Translation
- Descriptors DEI
- CRYSTAL DEFECTS; ELECTRONIC STRUCTURE; EXPERIMENTAL DATA; NEUTRON BEAMS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE; VACANCIES
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DATA; ELEMENTS; INFORMATION; MATERIALS; NUCLEON BEAMS; NUMERICAL DATA; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Notes
- Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 36, 1412-1417 (No. 12, 2002); (c) 2002 MAIK ''Nauka / Interperiodica''.