Published July 15, 2010 | Version v1
Journal article Metadata-only

Chemical structure of vanadium-based contact formation on n-AlN

Creators

  • 1. Department of Chemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, Nevada 89154-4003 (United States)
  • 2. Department of Electrical and Computer Engineering, Boston University, Boston, Massachusetts 02215 (United States)
  • 3. Department of Geoscience, University of Nevada, Las Vegas, Las Vegas, Nevada 89154-4010 (United States)
  • 4. Solar Energy Research, Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, 14109 Berlin (Germany)
  • 5. Experimentelle Physik VII, Universitaet Wuerzburg, 97074 Wuerzburg (Germany)
  • 6. Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

Description

We have investigated the chemical interaction between a Au/V/Al/V layer structure and n-type AlN epilayers using soft x-ray photoemission, x-ray emission spectroscopy, and atomic force microscopy. To understand the complex processes involved in this multicomponent system, we have studied the interface before and after a rapid thermal annealing step. We find the formation of a number of chemical phases at the interface, including VN, metallic vanadium, aluminum oxide, and metallic gold. An interaction mechanism for metal contact formation on the entire n-(Al,Ga)N system is proposed.

Additional details

Identifiers

DOI
10.1063/1.3456060;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
108
Journal Issue
2
Journal Page Range
p. 024906-024906.6
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42069806
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; ANNEALING; ATOMIC FORCE MICROSCOPY; EMISSION SPECTROSCOPY; EPITAXY; GOLD; HETEROJUNCTIONS; INTERFACES; LAYERS; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SOFT X RADIATION; SURFACES; VANADIUM; VANADIUM NITRIDES; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
ALUMINIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; HEAT TREATMENTS; IONIZING RADIATIONS; MATERIALS; METALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; RADIATIONS; SECONDARY EMISSION; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; VANADIUM COMPOUNDS; X RADIATION

Optional Information

Notes
(c) 2010 American Institute of Physics