Published November 1, 2010 | Version v1
Journal article

High temperature oxidation resistance of fluorine-treated TiAl alloys: Chemical vs. ion beam fluorination techniques

  • 1. Goethe-Universitaet Frankfurt am Main, Institute for Nuclear Physics (IKF), Max-von-Laue-Strasse 1, 60438 Frankfurt am Main (Germany)
  • 2. Karl-Winnacker-Institut der Dechema e.V., Theodor-Heuss-Allee 25, 60486 Frankfurt am Main (Germany)
  • 3. Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden (Germany)

Description

The modification of the alloy surface by halogens significantly improves their oxidation behaviour at high temperature. It corresponds to the preferential reaction of the aluminium with the applied fluorine at the oxide/alloy interface and it promotes the growth of an adherent and stable alumina layer. Well-defined fluorine profiles beneath the surface of the material can be achieved by either fluorine beam line ion implantation (BLI2) or plasma immersion ion implantation (PI3). As an alternative to the implantation-based approach, chemical fluorination techniques such as gas-phase treatment and dipping in F-based solutions were also investigated. The fluorine depth-profiles were measured before and after oxidation at 900 oC using non destructive ion beam analyses: Proton Induced Gamma-ray Emission (PIGE), Rutherford Backscattering Spectroscopy (RBS) as well as Elastic Recoil Detection Analysis (ERDA). It enables to control and to optimise the fluorination conditions of technical TiAl alloys for an industrial application.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2010.08.001

Additional details

Identifiers

DOI
10.1016/j.nimb.2010.08.001;
PII
S0168-583X(10)00670-1;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
268
Journal Issue
21
Journal Page Range
p. 3381-3385
ISSN
0168-583X
CODEN
NIMBEU

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.