Published February 5, 1985 | Version v1
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Predamage threshold electron emission from insulator and semiconductor surfaces

Creators

Description

Predamage electron emission shows a dependence on fluence, bandgap and wavelength consistent with multiphoton excitation across the bandgap and inconsistent with avalanche ionization and thermionic emission models. The electron emission scales with pulselength as 1/√T. 6 references, 8 figures, 1 table

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01 as DE85008968.

Files

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The record is publicly accessible, but files are restricted to users with access.

Additional details

Publishing Information

Imprint Pagination
14 p.
Report number
UCRL--89886

Conference

Title
Symposium on optical materials for high power lasers.
Dates
15-17 Oct 1984.
Place
Boulder, CO (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
16077301
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
BAND THEORY; ELECTRON EMISSION; EXCITATION; EXPERIMENTAL DATA; IONIZATION; LASER RADIATION; MULTI-PHOTON PROCESSES; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS
Descriptors DEC
DATA; ELECTROMAGNETIC RADIATION; EMISSION; ENERGY-LEVEL TRANSITIONS; INFORMATION; MATERIALS; NUMERICAL DATA; RADIATION EFFECTS; RADIATIONS

Optional Information

Secondary number(s)
CONF-8410186--3.