Published November 2004 | Version v1
Miscellaneous Open

Determination of the longitudinal charge distribution at the Si-SiO2 interface of MOSFET by C-V measurements

  • 1. Urgench state univ., Urgench (Uzbekistan)
  • 2. Inst. of semicond. technology, Technical univ., Braunschweig (Germany)

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Part of:
Proceedings of international conference dedicated to the ninetieth anniversary of academician S.A. Azimov 'Fundamental and applied problems of physics'

Additional details

Additional titles

Original title (English)
Trudy mezhdunarodnoj konferentsii, posvyashchennoj 90-letiyu akademika S.A. Azimova 'Fundamental'nye i prikladnye voprosy fiziki'

Publishing Information

Publisher
Nauchno-proizvodstvennoe ob'edinenie 'Fizika-Solntse'
Imprint Place
Tashkent (Uzbekistan)
Imprint Title
Proceedings of international conference dedicated to the ninetieth anniversary of academician S.A. Azimov 'Fundamental and applied problems of physics'
Imprint Pagination
506 p.
Journal Page Range
p. 222-224
Report number
INIS-UZ--132

Conference

Title
International conference dedicated to the 19. anniversary of academician S.A. Azimov 'Fundamental and applied problems of physics'
Original Conference Title
Mezhdunarodnaya konferentsiya, posvyashchennaya 90-letiyu akademika S.A. Azimova 'Fundamental'nye i prikladnye voprosy fiziki'
Dates
18-19 Nov 2004
Place
Tashkent (Uzbekistan)

Optional Information

Notes
6 refs.,1 figs. Imprint:Trudy mezhdunarodnoj konferentsii, posvyashchennoj 90-letiyu akademika S.A. Azimova 'Fundamental'nye i prikladnye voprosy fiziki'