Published January 2005
| Version v1
Journal article
Spin effect in the magnetoresistance of n-InxGa1-xAs/GaAs double quantum well, induced by the parallel magnetic field
Creators
- 1. UrO RAN, Inst. Fiziki Metallov, Ekaterinburg (Russian Federation)
- 2. Fiziko-Tekhnicheskij Inst. Nizhegorodskogo Gosudarstvennogo Univ. im. N.I. Lobachevskogo, Nizhnij Novgorod (Russian Federation)
- 3. Inst. Van-der-Vaal'sa-Zeemana, Univ. Amsterdama, Amsterdam (Netherlands)
Description
For double quantum wells (DQW) created in the n-InxGa1-xAs/GaAs (x ≅ 0.18) heterosystem, peculiarities in the parallel magnetic fields induced magnetoresistance caused by passing of the tunnel gap edges through the Fermi level are revealed and investigated. It is shown that spin splitting of the electron energy should be considered for reaching the agreement between the calculated and experimental data
Abstract (Russian)
В магнитном поле, ориентированном параллельно слоям двойных квантовых ям, изготовленных в гетеросистеме n-InxGa1-xAs/GaAs (x ≅ 0.18), обнаружены и исследованы особенности магнитосопротивления, обусловленные прохождением краев туннельной щели через уровень Ферми. Показано, что для достижения согласия расчетных данных с экспериментальными нужно учитывать спиновые расщепления в энергетическом спектреAdditional details
Additional titles
- Original title (Russian)
- Спиновые эффекты в индуцированном параллельным магнитным полем магнитосопротивлении двойной квантовой ямы н-Ин
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 39
- Journal Issue
- 1
- Journal Page Range
- p. 118-123
- ISSN
- 0015-3222
- CODEN
- FTPPA4
Conference
- Title
- Nanophotonics-2004
- Original Conference Title
- Soveshchanie: Nanofotonika-2004
- Acronym
- Conference
- Dates
- 2-6 May 2004
- Place
- Nizhnij Novgorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 37104078
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BAND THEORY; DIAGRAMS; ELECTRON SPECTRA; ELECTRONIC STRUCTURE; ENERGY SPECTRA; FERMI LEVEL; GALLIUM ARSENIDES; HALL EFFECT; HETEROJUNCTIONS; INDIUM ARSENIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; QUANTUM WELLS; SOLID SOLUTIONS; SPIN
- Descriptors DEC
- ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; DISPERSIONS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY LEVELS; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; INFORMATION; MIXTURES; NANOSTRUCTURES; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SOLUTIONS; SPECTRA
Optional Information
- Notes
- 9 refs., 6 figs., 1 tab.