Electromechanical response of amorphous LaAlO3 thin film probed by scanning probe microscopies
Creators
- 1. Institut des nanotechnologies de Lyon (INL), Institut National des Sciences Appliquées de Lyon, Université de Lyon, UMR CNRS 5270, 7 Avenue Capelle, F-69621 Villeurbanne Cedex (France)
- 2. Institut des nanotechnologies de Lyon (INL), Ecole Centrale de Lyon, Université de Lyon, UMR CNRS 5270, 36 Avenue Guy de Collongues, F-69134 Ecully Cedex (France)
Description
The electromechanical response of a 3 nm thick amorphous LaAlO3 layer obtained by molecular beam epitaxy has been studied using scanning probe microscopies. Although this kind of sample is not ferroelectric due to its amorphous nature, the resulting images are identical to what is generally obtained on truly ferroelectric samples probed by piezoresponse force microscopy: domains of apparently opposite polarisation are detected, and perfect, square shaped hysteresis loops are recorded. Moreover, written patterns are stable within 72 h. We discuss in the general case the possible origins of this behaviour in terms of charge injection, ionic conduction and motion of oxygen vacancies. In the case presented in this paper, since the writing process has been conducted with applied voltages lower than the injection threshold measured by conductive atomic force Microscopy, allowing to withdraw the hypothesis of charge injection in the sample, we propose that a bistable distribution of oxygen vacancies is responsible for this contrast.
Additional details
Identifiers
- DOI
- 10.1063/1.4889853;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 1
- Journal Page Range
- p. 012906-012906.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46010650
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINATES; AMORPHOUS STATE; ATOMIC FORCE MICROSCOPY; DISTRIBUTION; ELECTRIC POTENTIAL; FERROELECTRIC MATERIALS; HYPOTHESIS; HYSTERESIS; INJECTION; LANTHANUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; OXYGEN; PIEZOELECTRICITY; POLARIZATION; SCANNING ELECTRON MICROSCOPY; THIN FILMS; VACANCIES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ELECTRICITY; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; FILMS; INTAKE; MATERIALS; MICROSCOPY; NONMETALS; OXYGEN COMPOUNDS; POINT DEFECTS; RARE EARTH COMPOUNDS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC