Published 1988
| Version v1
Book
On the p-type conduction of cadmium telluride single crystals
Description
This paper presents some investigations on the p-type conduction of CdTe single crystals. By using phosphorus implantation and pulse electron beam(PEB) annealing, high hole concentrations were obtained. The electron paramagnetic resonance (EPR) measurements as well as the theoretical calculations of the implant and damage profiles after the implantation and the dopant redistribution profiles after the pulse electron beam annealing show the significant effect of melting crystals in the E-beam annealing process of the p-type conduction
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- Twentieth IEEE photovoltaic specialists conference, 1988
- Imprint Pagination
- 1671 p.
- Series
- Volume 1-2.
- Journal Page Range
- p. 1491-1494.
Conference
- Title
- 20. IEEE photovoltaic specialists conference.
- Dates
- 26-30 Sep 1988.
- Place
- Las Vegas, NV (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21035335
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CADMIUM TELLURIDES; CRYSTAL DOPING; MONOCRYSTALS; P-TYPE CONDUCTORS; PHOSPHORUS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELEMENTS; HEAT TREATMENTS; MATERIALS; NONMETALS; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-880965--.