Determination of boron concentration in silicon single crystals by neutron-induced alpha autoradiography

The possibility of boron determination in silicon single crystals was examined in the 1016 to 1020 B atom/cm3 concentration range using neutron induced alpha radiography. Samples were irradiated in a nuclear reactor at a thermal neutron fluence of 1010 to 1012 n/cm2 and a cadmium ratio of 30. As alppha-sensitive track detectors KODAK LR-115 and Makrofol E were used. The results indicated that under the conditions used boron could be determined in the 1017 to 1020 B atom/cm3 concentration range. The Makrofol E detector could be used to advantage in the upper range while the Kodak LR-115 foil in the lower range of this concentration. (author)