Stimulation and investigation of silicon sputtering by oxygen ions under steady-state conditions

Silicon physico-chemical sputtering by oxygen ions under steady-state conditions is investigated by mathematical simulation. The suggested model is ion implantation superposition, physical sputtering and chemical modification model differs from used before models and allows to obtain the results, which coincide with available experimental data. It is shown, that sputtering coefficient, determined by resulting crater depth, is the set of actions of surface sputtering and radiation swelling due to oxide phase precipitation. Nonmonotonic dependence effect of crater formation rate on angle value within αcr certain value range is found at investigation of silicon irradiation by oxygen ions at different angles concerning the normal to surface. It is established, that stoichiometric oxide is formed in near-the-surface layer at angles less, than αcr. Good correspondence of theoretical and published before experimental data is shown