Published July 1998
| Version v1
Journal article
Recombination properties of clean '16 x 2' and Pb- or Al-covered (110) silicon surfaces
- 1. Institute of Semiconductor Physics, Kiev (Ukraine)
- 2. Consiglio Nazionale delle Ricerche, Rome (Italy). Istituto della Struttura della Materia
Description
The photoconductivity decay time constant τf was studied on the clean Si(110)-'16 x 2' surface and after adsorption of Al and Pb atoms. Significant changes of τf were observed after adsorption. Namely, τf increased about an order of magnitude and became close to the bulk decay time after adsorption on the '16 x 2' phase at room temperature. One could explain the observed results by changes in the surface electron distribution, when large energy gaps appear between bulk and surface states
Additional details
Publishing Information
- Journal Title
- Nuovo Cimento. D
- Journal Volume
- 20D
- Journal Issue
- 7-8
- Journal Page Range
- p. 1025-1027
- ISSN
- 0392-6737
- CODEN
- NCSDDN
INIS
- Country of Publication
- Italy
- Country of Input or Organization
- Italy
- INIS RN
- 30016173
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRONIC STRUCTURE; PHOTOCONDUCTIVITY; PHOTOVOLTAIC EFFECT; SILICON; SURFACE PROPERTIES
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; SEMIMETALS