Published November 13, 2006
| Version v1
Journal article
High Temperature Implantation of Aluminum in 4H Silicon Carbide
Creators
- 1. Universitaet Erlangen-Nuernberg, Lehrstuhl fuer Elektronische Bauelemente, Cauerstrasse 6, 91058 Erlangen (Germany)
- 2. Fraunhofer Institut fuer Integrierte Systeme und Bauelementetechnologie (IISB), Schottkystrasse 10, 91058 Erlangen (Germany)
Description
The influence of implantation temperature on the resistivity of aluminum implanted 4H-silicon carbide was determined. A dose of 1.2 · 1015 cm-2 aluminum ions was implanted at temperatures between room temperature and 1000 deg. C. A decrease of resistivity down to 0.35Ωcm was found with increasing implantation temperature. The influence of implantation temperature on resistivity was identified by modeling temperature dependent resistivity data. The results showed an increase of mobility due to the lowering of compensating centers
Additional details
Identifiers
- DOI
- 10.1063/1.2401514;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 866
- Journal Issue
- 1
- Journal Page Range
- p. 287-290
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 16. international conference on ion implantation technology
- Acronym
- IIT 2006
- Dates
- 11-16 Jun 2006
- Place
- Marseille (France)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38056372
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; ALUMINIUM IONS; ION IMPLANTATION; SILICON CARBIDES; SIMULATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; ELEMENTS; IONS; METALS; SILICON COMPOUNDS; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2006 American Institute of Physics