Published December 1974 | Version v1
Journal article Metadata-only

Distributed-feedback double-heterostructure GaAs injection laser with fundamental grating

Creators

  • 1. Rockwell International Corp., Anaheim, CA

Description

The pulse operation of two DEF GaAs junction lasers employing the fundamental grating order at 770K for double-heterostructures formed by both liquid and vapor phase epitaxy is described

Additional details

Identifiers

DOI
10.1364/ao.13.002742;

Publishing Information

Journal Title
Applied Optics
Journal Volume
13
Journal Issue
12
Series
Appl. Opt.
Journal Page Range
2742
ISSN
0003-6935

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
7237299
Subject category
S42: ENGINEERING;
Descriptors DEI
ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; OPERATION; SEMICONDUCTOR LASERS
Descriptors DEC
ALUMINIUM COMPOUNDS; AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; LASERS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS

Optional Information

Notes
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