Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes
Creators
- 1. Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China)
- 2. Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China)
- 3. Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)
- 4. Department of Electronic Engineering, Kun-Shan University, Tainan 71003, Taiwan (China)
Description
The influence of the AlGaN electron blocking layer (EBL) with graded aluminum composition on electron confinement and hole injection in AlGaN-based ultraviolet light-emitting diodes (LEDs) are investigated. The light output power of LED with graded AlGaN EBL was markedly improved, comparing to LED with conventional EBL. In experimental results, a high increment of 86.7% can be obtained in light output power. Simulation analysis shows that via proper modification of the barrier profile from the last barrier of the active region to EBL, not only the elimination of electron overflow to p-type layer can be achieved but also the hole injection into the active region can be enhanced, compared to a conventional LED structure. The dominant factor to the performance improvement is shown to be the modulation of polarization field by the graded Al composition in EBL
Additional details
Identifiers
- DOI
- 10.1063/1.4868675;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 115
- Journal Issue
- 11
- Journal Page Range
- p. 113102-113102.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45092424
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM; ALUMINIUM COMPOUNDS; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; DEPLETION LAYER; ELECTRONS; GALLIUM NITRIDES; HOLES; LIGHT EMITTING DIODES; MODULATION; POLARIZATION; ULTRAVIOLET RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; EVALUATION; FERMIONS; GALLIUM COMPOUNDS; LAYERS; LEPTONS; METALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SIMULATION
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC