Characterization of zinc blende CuInS2 nanostructured film: the XRD, Raman, FT-IR and UV-vis spectroscopical investigations
Description
Zinc blende semiconductor CuInS2 has not been focus of studies until recently. Ultrasonic spray pyrolysis (USP) method is used to deposit zinc blende CuInS2 nanostructured film on glass substrate at 250°C in this study. The film was characterized by vibrational (FT-IR and Raman) spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectra. The crystallite size was calculated to be around 30 nm by using the well- known Scherrer equation with the peak corresponding to (111) plane. The Raman peak at 306 cm-1 is assigned to the A1 mode of the CuAu ordered CuInS2 . Thus, metastable cubic zinc blende structure would be evidenced. The absorption coefficient of the film has been found to be in the order of 104 -105 cm−1, which make it promising for an intensive optoelectronic application. (author)
Additional details
Publishing Information
- Journal Title
- Indian Journal of Pure and Applied Physics
- Journal Volume
- 54
- Journal Issue
- 12
- Journal Page Range
- p. 797-801
- ISSN
- 0019-5596
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 52048413
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COATINGS; COPPER SULFIDES; CRYSTALLOGRAPHY; DEPOSITION; INDIUM SULFIDES; MICROSTRUCTURE; NANOSTRUCTURES; NANOTECHNOLOGY; STRUCTURAL CHEMICAL ANALYSIS; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; COPPER COMPOUNDS; DIFFRACTION; FILMS; INDIUM COMPOUNDS; SCATTERING; SULFIDES; SULFUR COMPOUNDS; TRANSITION ELEMENT COMPOUNDS