Published 2010 | Version v1
Miscellaneous Metadata-only

Technology of ion-plasma etching of mesa-structures of 4HSiC P-I-N diodes

Creators

  • 1. GP NII 'Orion', Kyiv (Ukraine)
  • 2. Institute for Nuclear Research, Kyiv (Ukraine)

Description

no abstract available

Part of:
Annual report-2009. Institute for Nuclear Research of National Academy of Sciences of Ukraine

Additional details

Additional titles

Original title (Russian)
Технология ионно-пласзменного травления меза-структур 4HSiC П-И-Н диодов

Publishing Information

Publisher
INR NAN of Ukraine
Imprint Place
Kyiv (Ukraine)
Imprint Title
Annual report-2009. Institute for Nuclear Research of National Academy of Sciences of Ukraine
Imprint Pagination
186 p.
Journal Page Range
p. 130
Report number
INIS-UA--157

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
42016340
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Non-conventional Literature, No Abstract
Descriptors DEI
COATINGS; ETCHING; ION PLASMA WAVES; PERFORMANCE TESTING; SEMICONDUCTOR DIODES; SILICON CARBIDES; SPECIFICATIONS
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; ION WAVES; PLASMA WAVES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SURFACE FINISHING; TESTING

Optional Information

Notes
Imprint:Shchoryichnik-2009. Natsyional'na Akademyiya Nauk Ukrayini Yinstitut Yadernikh Doslyidzhen'