Published December 16, 1989 | Version v1
Journal article

Ion beam lithography of polycrystalline CaF2 films deposited on silicon

  • 1. Technische Univ., Dresden (German Democratic Republic). Sektion Physik
  • 2. Technische Univ., Karl-Marx-Stadt (German Democratic Republic). Sektion Physik/Elektronische Bauelemente
  • 3. Zentralinstitut fuer Kernforschung, Rossendorf (German Democratic Republic)

Description

Thin polycrystalline CaF2-layers deposited on silicon are exposed to 60 keV He+-, Ar+-, Si+-, and 30 keV O+-ions. Modifications in film composition are measured by RHEED and RBS. Positive and negative resist behaviour is observed in water and dilute HCl, respectively. Both the change of chemical composition and the pattern characteristics are found to correlate with the energy loss of the incoming ions. (author)

Additional details

Publishing Information

Journal Title
Physica Status Solidi A
Journal Volume
116
Journal Issue
2
Series
Phys. Status Solidi A.
Journal Page Range
735-743
ISSN
0031-8965
CODEN
PSSAB