Published May 6, 2013
| Version v1
Journal article
Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
Creators
- 1. ISOM and Dept. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
- 2. Paul-Drude-Institut für Festköperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
Description
This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.
Additional details
Identifiers
- DOI
- 10.1063/1.4804293;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 102
- Journal Issue
- 18
- Journal Page Range
- p. 181103-181103.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44117324
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; COLOR; EMISSION; GALLIUM COMPOUNDS; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; NANOSTRUCTURES; NITROGEN COMPOUNDS; OPTIMIZATION; PLASMA; SEMICONDUCTOR MATERIALS; VISIBLE RADIATION; WAVELENGTHS
- Descriptors DEC
- CHEMICAL COATING; CRYSTAL GROWTH METHODS; DEPOSITION; ELECTROMAGNETIC RADIATION; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; ORGANOLEPTIC PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SURFACE COATING
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC