Published May 6, 2013 | Version v1
Journal article

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

  • 1. ISOM and Dept. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
  • 2. Paul-Drude-Institut für Festköperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

Description

This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
102
Journal Issue
18
Journal Page Range
p. 181103-181103.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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