Published February 2007
| Version v1
Journal article
Design and Simulation of a High-Density Fast Amplifier with 180-nm Technology
Description
An application-specific integrated circuit of a preamplifier and shaper has been designed to be used for readout of high-density sensors such as silicon microstrip detectors. The chip is designed with 180-nm technology and is optimized with respect to the shaping time and the reset capability. The detailed simulations show that a gain of 15 mV/fC may be achieved with the design.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 50
- Journal Issue
- 2
- Series
- 15 refs, 7 figs
- Journal Page Range
- p. 500-504
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 49069505
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- AMPLIFIERS; DENSITY; DESIGN; LI-DRIFTED SI DETECTORS; SHAPE; SILICON; SIMULATION
- Descriptors DEC
- ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; LI-DRIFTED DETECTORS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS; SI SEMICONDUCTOR DETECTORS