Published July 1974 | Version v1
Journal article Metadata-only

The role of radiation damage on the current-voltage characteristics of p-n junctions

Creators

  • 1. Leeds Univ. (UK)

Description

no abstract available

Additional details

Identifiers

DOI
10.1016/0038-1101(74)90092-6;

Publishing Information

Journal Title
Solid-State Electronics
Journal Volume
17
Journal Issue
7
Series
Solid-State Electron.
Journal Page Range
689-698
ISSN
0038-1101

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
5139796
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
CARBON IONS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ION IMPLANTATION; JUNCTION DIODES; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE DEPENDENCE
Descriptors DEC
CHARGED PARTICLES; CURRENTS; ELEMENTS; IONS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS

Optional Information

Notes
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