The influence of thermal treatment and radiation on electrophysical properties of silicon doped with platinum

The nature and kinetics of radiation defect formation in silicon with various doping levels of boron and platinum were studied by deep level transient spectroscopy method. It was found that growth of platinum concentration creates centers with deep energy levels and in this case the concentration of divacancies(Ev+0.25 eV) decreases but that of complexdivacancy +oxygen + carbon(Ev+0.36eV) and vacancy + boron(Ev+0.44eV) increases. The results obtained are explained as results of transformation of defect complexes under irradiation. On the basis of experimental results the sensible semiconductor thermoresistors with enhanced radiation hardness have been developed. (author)