Published 2004 | Version v1
Miscellaneous Metadata-only

Radiation defects formation in silicon at high energy implantation

Creators

  • 1. Belarussian State University, Minsk (Belarus)

Description

no abstract available

Part of:
Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004

Additional details

Publishing Information

Imprint Title
Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
Imprint Pagination
257 p.
Journal Page Range
p. 134

Conference

Title
5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
Dates
14-17 Jun 2004
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
36060116
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ARGON IONS; BORON IONS; CRYSTAL DEFECTS; DEPTH; ELECTRIC CONDUCTIVITY; FRENKEL DEFECTS; HALL EFFECT; INFRARED SPECTRA; ION IMPLANTATION; MONOCRYSTALS; OXYGEN IONS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SILICON; SPATIAL DISTRIBUTION
Descriptors DEC
CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; DIMENSIONS; DISTRIBUTION; DOSES; ELECTRICAL PROPERTIES; ELEMENTS; IONS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS; SPECTRA; VACANCIES

Optional Information