Published February 1990
| Version v1
Journal article
Ion mixing of Au-InP and Au-GaP interfaces
- 1. Kaunasskij Politekhnicheskij Inst., Kaunas (USSR)
Description
Ion mixing effect at the interface of InP and GaP monocrystals with applied gold film is investigated. Samples are irradiated by 75 keV energy argon ions with 1014-3x1016 cm-2 doses and then annealed at 320 deg C in helium flow. Investigations by Rutherford backscattering method have been shown that starting with 1016 cm-2 dose a weak mutual diffusion of Au and Ga and a more intense Au and In diffusion take place. Destruction of InP crystal lattice and surface layer amorphization are observed under effect of radiation
Additional details
Additional titles
- Original title (Russian)
- Ионное перемешивание границы раздела Ау-InP и Ау-GaP
Publishing Information
- Journal Title
- Zhurnal Tekhnicheskoj Fiziki
- Journal Volume
- 60
- Journal Issue
- 2
- Series
- Zh. Tekh. Fiz.
- Journal Page Range
- 220-221
- ISSN
- 0044-4642
- CODEN
- ZTEFA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 23001001
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ARGON IONS; COATINGS; DIFFUSION; GALLIUM PHOSPHIDES; GOLD; INDIUM PHOSPHIDES; INTERFACES; KEV RANGE 10-100; MIXING; MONOCRYSTALS; RADIATION DOSES; RADIATION EFFECTS
- Descriptors DEC
- CHARGED PARTICLES; CRYSTALS; ELEMENTS; ENERGY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; IONS; KEV RANGE; METALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; TRANSITION ELEMENTS