Electric field effects on nonlinear optical rectification in symmetric coupled AlxGa1−xAs/GaAs quantum wells
- 1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275 (China)
- 2. Department of Physics, School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006 (China)
- 3. Department of Physics, Shahrood University of Technology, Shahrood (Iran, Islamic Republic of)
- 4. School of Physics, Nanjing University, Nanjing 210093 (China)
Description
Highlights: •Electric field-dependent optical rectification is revealed. •Well width-dependent optical rectification is revealed under electric field. •Barrier width-dependent optical rectification is revealed under electric field. -- Abstract: Nonlinear optical rectification in symmetric coupled AlxGa1−xAs/GaAs quantum wells with external electric field is investigated using numerical method and compact density matrix approach. Our results reveal that for the resonant peaks of optical rectification, a blue shift is exhibited for increasing electric field, while a red shift followed by a blue shift is exhibited for increasing barrier or well widths. The resonant peak values of optical rectification can reach a maximum value by an appropriate choice for the electric field, the barrier or well widths. Our studies pave the way for the design, optimization and applications of quantum-sized nonlinear optoelectronic devices.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2018.07.026Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2018.07.026;
- PII
- S0040609018304917;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 662
- Journal Page Range
- p. 27-32
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50037114
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ALUMINIUM COMPOUNDS; DENSITY MATRIX; GALLIUM ARSENIDES; NONLINEAR PROBLEMS; OPTOELECTRONIC DEVICES; QUANTUM WELLS; RED SHIFT; SYMMETRY; X-RAY SPECTROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; MATRICES; NANOSTRUCTURES; OPTICAL EQUIPMENT; PNICTIDES; SPECTROSCOPY; TRANSDUCERS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.