Published September 2018 | Version v1
Journal article

Electric field effects on nonlinear optical rectification in symmetric coupled AlxGa1−xAs/GaAs quantum wells

  • 1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275 (China)
  • 2. Department of Physics, School of Physics and Electronic Engineering, Guangzhou University, Guangzhou 510006 (China)
  • 3. Department of Physics, Shahrood University of Technology, Shahrood (Iran, Islamic Republic of)
  • 4. School of Physics, Nanjing University, Nanjing 210093 (China)

Description

Highlights: •Electric field-dependent optical rectification is revealed. •Well width-dependent optical rectification is revealed under electric field. •Barrier width-dependent optical rectification is revealed under electric field. -- Abstract: Nonlinear optical rectification in symmetric coupled AlxGa1−xAs/GaAs quantum wells with external electric field is investigated using numerical method and compact density matrix approach. Our results reveal that for the resonant peaks of optical rectification, a blue shift is exhibited for increasing electric field, while a red shift followed by a blue shift is exhibited for increasing barrier or well widths. The resonant peak values of optical rectification can reach a maximum value by an appropriate choice for the electric field, the barrier or well widths. Our studies pave the way for the design, optimization and applications of quantum-sized nonlinear optoelectronic devices.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2018.07.026

Additional details

Identifiers

DOI
10.1016/j.tsf.2018.07.026;
PII
S0040609018304917;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
662
Journal Page Range
p. 27-32
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.