Effect of acceptor-impurity concentration and irradiation temperature on defect formation in p-type silicon irradiated with electrons

Carrier removal velocity (Δp/Δ PHI) and the Hall mobility change have been investigated depending on an initial carrier concentration (psub(0)) in the p type silicon, irradiated with 2 MeV electrons at 78-200 K. It is shown, that at 120 K irradiation temperature singly charged donor centres are formed independently of the alloying admixture type (B or Al) with the same introduction rate. Changes of electric properties, observed during the experiment, are explained on the assumption of different charge states of the Frenkel pair components. The Δp/Δ PHI dependence within the irradiation temperature range from 95 to 200 K is described by the expression of Δp/Δ PHI approximately equal to exp (-0.025/kT)