Flexible conductive-bridging random-access-memory cell vertically stacked with top Ag electrode, PEO, PVK, and bottom Pt electrode

Flexible conductive-bridging random-access-memory (RAM) cells were fabricated with a cross-bar memory cell stacked with a top Ag electrode, conductive polymer (poly(n-vinylcarbazole): PVK), electrolyte (polyethylene oxide: PEO), bottom Pt electrode, and flexible substrate (polyethersulfone: PES), exhibiting the bipolar switching behavior of resistive random access memory (ReRAM). The cell also exhibited bending-fatigue-free nonvolatile memory characteristics: i.e., a set voltage of 1.0 V, a reset voltage of –1.6 V, retention time of >1 × 10⁵ s with a memory margin of 9.2 × 10⁵, program/erase endurance cycles of >10² with a memory margin of 8.4 × 10⁵, and bending-fatigue-free cycles of ∼1 × 10³ with a memory margin (I_on/I_off) of 3.3 × 10⁵. (paper)