Experimental demonstration of low-voltage operated dielectric barrier discharge plasma actuators using SiC MOSFETs
Creators
- 1. Department of Aerospace Engineering, Tohoku University, Sendai 980-8579 (Japan)
- 2. Department of Advanced Energy, The University of Tokyo, Chiba 227-8569 (Japan)
Description
Successful operation of a multi-stage dielectric-barrier-discharge (DBD) plasma actuator is demonstrated by operating it on voltage one order of magnitude lower than that of a conventional single-stage DBD plasma actuator. An applied voltage waveform of direct current (DC) voltage combined with high-frequency repetitive pulses is generated by a simple power system consisting of a DC power supply and silicon carbide metal-oxide-semiconductor field-effect transistors. The time-averaged flow field obtained by particle image velocimetry indicates that a successively accelerated ionic wind is obtained by the eight-stage DBD plasma actuator. The velocity of the induced ionic wind increases with increasing DC voltage and repetitive pulse frequency. The maximum velocity of approximately 4.5 m s−1 is achieved when the DC voltage of is applied with the switching frequency of , suggesting that the proposed multi-stage DBD plasma actuator induces the same level of ionic wind as a conventional high-voltage-operated single-stage DBD plasma actuator, even with a low voltage. (letter)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6463/aba0e1Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 53
- Journal Issue
- 43
- Journal Page Range
- [7 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52055464
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTUATORS; DIELECTRIC MATERIALS; DIRECT CURRENT; ELECTRIC POTENTIAL; KHZ RANGE; METALS; MOSFET; OXIDES; PLASMA; PULSES; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; WAVE FORMS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CURRENTS; ELECTRIC CURRENTS; ELEMENTS; FIELD EFFECT TRANSISTORS; FREQUENCY RANGE; MATERIALS; MOS TRANSISTORS; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS