Published November 2012 | Version v1
Journal article Metadata-only

12.5 Gb/s carrier-injection silicon Mach—Zehnder optical modulator

Creators

  • 1. State Key Laboratory on Integrated Optoelectronics and Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Description

We demonstrate a 12.5 Gb/s carrier-injection silicon Mach—Zehnder optical modulator. Under a nonreturn-zero (NRZ) pre-emphasized electrical drive signal with voltage swing of 6.3 V and forward bias of 0.7 V, the eye is clearly opened with an extinction ratio of 8.4 dB. The device exhibits high modulation efficiency, with a figure of merit VπL of 0.036 V·mm. (semiconductor devices)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/33/11/114005

Additional details

Identifiers

DOI
10.1088/1674-4926/33/11/114005;

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
33
Journal Issue
11
Journal Page Range
[3 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44043097
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
EFFICIENCY; MODULATION; PERFORMANCE; SEMICONDUCTOR DEVICES; SIGNALS; SILICON
Descriptors DEC
ELEMENTS; SEMIMETALS