Published 1988
| Version v1
Miscellaneous
The formation of deep radiation centers in 300 keV proton-irradiated silicon
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Образование глубоких радиационных центров в кремнии, облученном протонами с энергией 300 кэв
Publishing Information
- Imprint Title
- Summaries of reports of the 18. All-union conference on charged particle interaction with crystals
- Journal Page Range
- p. 169.
- Report number
- INIS-SU--98
Conference
- Title
- 18. All-union conference on charged particle interaction with crystals.
- Dates
- 30 May - 1 Jun 1988.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 20058304
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- COLOR CENTERS; INCIDENCE ANGLE; KEV RANGE 100-1000; MONOCRYSTALS; N-TYPE CONDUCTORS; ORIENTATION; PHYSICAL RADIATION EFFECTS; PLATES; PROTON BEAMS; RANGE; SILICON
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; ENERGY RANGE; KEV RANGE; MATERIALS; NUCLEON BEAMS; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; VACANCIES
Optional Information
- Notes
- Short note. Imprint:Tezisy dokladov 18. Vsesoyuznogo soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.