Simulation of photoactivated bipolar devices

In this thesis we develop a one dimensional Monte Carlo model, and one and two dimensional drift-diffusion models to investigate the operation of GaAs and InP/In0.53Ga0.47As bipolar photoactivated devices. For both simulation methods we investigate ways to improve the speed and stability of solution. This includes a simplified hole band structure model in the Monte Carlo simulator, which out performs more complex models, and different discretisation schemes in the drift-diffusion method