Published August 1993 | Version v1
Journal article

The effects of model parameter variations on high-fluence ion implantation

  • 1. Salford Univ. (United Kingdom). Dept. of Electronic and Electrical Engineering
  • 2. Bylgarska Akademiya na Naukite, Sofia (Bulgaria). Inst. po Elektronika
  • 3. Univ. d'Alacant (Spain). Dept. de Fisica Aplicada
  • 4. Univ. Complutense of Madrid (Spain). Dept. of Electricity and Electronics

Description

A general form of the balance equation, to describe the variation of concentration of atomic species during ion bombardment of solids, is employed to reveal the influence of model parameters (atomic volumes and target relaxation) in determining atomic redistribution during high-fluence ion implantation. The study, firstly, of a simple case, ion implantation without mixing, allows us to obtain analytic solutions of the balance equation and to perform an analysis of parametric dependences due to atomic volume mismatch. We also show the effects of atomic mixing and relaxation on the target density, obtained via full numerical solution of the balance equation. The importance of specifying appropriate atomic volumes for the different species involved in the description of mixing is stressed. (Author)

Additional details

Publishing Information

Journal Title
Vacuum
Journal Volume
44
Journal Issue
8
Journal Page Range
p. 783-789.
ISSN
0042-207X
CODEN
VACUAV