Published April 1985 | Version v1
Journal article Metadata-only

The interpretation of ellipsometric measurements of ion bombardment of noble gases on semiconductor surfaces

Creators

  • 1. Technische Hogeschool Twente, Enschede (Netherlands). Dept. of Applied Physics

Description

Low energy noble gas ion bombardment and thermal desorption studies were carried out on Si(111) and analysed, in situ, using spectroscopic ellipsometry. The amorphous layer thickness and implanted noble gas fraction were calculated. (orig.)

Additional details

Publishing Information

Journal Title
Surf. Sci.
Journal Volume
152/153
Journal Issue
pt.2
Series
CODEN: SUSCA.;Surf. Sci.
Journal Page Range
1079-1085
ISSN
0039-6028

Conference

Title
6. European conference on surface science (ECOSS-6).
Dates
1-5 Apr 1984.
Place
York (UK).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
16067361
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ARGON IONS; DESORPTION; EXPERIMENTAL DATA; HIGH TEMPERATURE; KRYPTON IONS; MEASURING METHODS; PERMITTIVITY; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; VERY HIGH TEMPERATURE
Descriptors DEC
CHARGED PARTICLES; DATA; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELEMENTS; INFORMATION; IONS; MATERIALS; NUMERICAL DATA; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS