Published July 1981
| Version v1
Journal article
Annealing of vacancies in electron-irradiated silver
- 1. Helsinki Univ. of Technology, Otaniemi (Finland). Dept. of Technical Physics
- 2. CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Dept. de Recherche Fondamentale
Description
Annealing of vacancies in electron-irradiated silver is studied by positron lifetime and residual resistivity measurements. The annealing stage III is found by both methods to be at about 250 K. The activation energy associated with this stage is measured to be 0.72 +- 0.05 eV. It is shown that the stage III recovery in silver is due to vacancy migration which results in formation of positron trapping sites having an exceptionally strong temperature-dependent trapping rate. The defects are interpreted as vacancy loops, which anneal out around 600 K. (author)
Additional details
Publishing Information
- Journal Title
- J. Phys., F (London). Met. Phys.
- Journal Volume
- 11
- Journal Issue
- 7
- Series
- J. Phys., F (London). Met. Phys.
- Journal Page Range
- 1337-1345
- ISSN
- 0305-4608
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 12624549
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ELECTRIC CONDUCTIVITY; ELECTRONS; HIGH TEMPERATURE; LIFETIME; LOW TEMPERATURE; MILLI EV RANGE; PHYSICAL RADIATION EFFECTS; POSITRONS; SILVER; TEMPERATURE DEPENDENCE; TIME DEPENDENCE; TRAPPING; VACANCIES
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; LEPTONS; MATTER; METALS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; TRANSITION ELEMENTS