Range distribution of 31P ions implanted into Ge

We have measured the depth distribution of 31P ions implanted at 50 keV to a fluence of 7x1015/cm2 into Ge using two methods: first, the surface-sensitive particle-induced X-ray excitation (PIXE) technique utilizing ion-induced X-ray emission has been exploited for absolute non-destructive analysis; second, secondary ion mass spectrometry has been performed to obtain the relative depth distribution for the same target