Magnetic impurity behavior in the type II broken-gap p-GaInAsSb/p-InAs:Mn heterostructures with 2D-semimetal channel at the interface

Magnetic impurity behavior have been studied in type II p-GaInAsSb/p-InAs heterostructures grown by liquid-phase epitaxy on InAs substrate heavily doped with manganese (p=(5-7)x1018 cm-3). Ferromagnetic properties of these structures become apparent during observation of anomalous Hall effect and negative magnetoresistance (Δρperpendicular/ρ) in low magnetic fields H=3-20 kOe at T=77-200 K. High value of negative magnetoresistance up to 30% and its quadratic dependence on a magnetic field were found. Effective magnetic moment M*=200μB and Curie temperature TC=200 K were evaluated. Contribution of Mn δ-layer placed on GaInAsSb epilayer was manifested in vertical quantum magnetotransport in high magnetic fields (B>8 T) and low temperatures (1.5-4.2 K). Presence of the narrow layer of Mn can control over spin-oriented tunneling of electrons from a semimetal channel across the type II broken-gap heterointerface.