Published 1991
| Version v1
Report
Solid-state and materials research: laser irradiation of solids. Formation of buried Sb and Bi dopant profiles in silicon by pulsed laser epitaxy
- 1. University of the Western Cape, Bellville (South Africa)
- 2. National Accelerator Centre, Faure (South Africa)
Description
Short communication. 1 ref., 1 fig
Additional details
Publishing Information
- ISBN
- 1 8748 7703 3
- Imprint Title
- NAC annual report March 1991
- Imprint Pagination
- 129 p.
- Journal Page Range
- p. 68-69.
- Report number
- NAC-AR--91-01
INIS
- Country of Publication
- South Africa
- Country of Input or Organization
- South Africa
- INIS RN
- 24058204
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Progress Report, No Abstract, Non-conventional Literature
- Descriptors DEI
- ANTIMONY; BACKSCATTERING; BISMUTH; DOPED MATERIALS; EPITAXY; EVAPORATION; LASER RADIATION; OXIDATION; OXYGEN; PROGRESS REPORT; RUBY LASERS; RUTHERFORD SCATTERING; SILICON; SOLIDS; SYNTHESIS
- Descriptors DEC
- AMPLIFIERS; CHEMICAL REACTIONS; CRYSTAL GROWTH METHODS; DOCUMENT TYPES; ELASTIC SCATTERING; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; LASERS; MATERIALS; METALS; NONMETALS; PHASE TRANSFORMATIONS; RADIATIONS; SCATTERING; SEMIMETALS; SOLID STATE LASERS