Surface state effects on N+P doped electron detector

Surface states and interface recombination velocity that exist between detector interfaces have always been known to affect the performance of a detector. This article describes how the detector performance varies when the doping profile is altered. When irradiated with electrons, the results show that while changes in the doping profile have an effect of the detector responsivity with respect to the interface recombination velocity vs, there is no visible effect with respect to fixed oxide charge Qf otherwise known as interface fixed charge density.