Published March 1982
| Version v1
Journal article
Study on low-energy ion interaction with the A3B5 compound surface
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Исследование взаимодействия ионов малых энергий с поверхностью соединений А
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 16
- Journal Issue
- 3
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 523-525
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 14715891
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; ARGON IONS; EV RANGE 100-1000; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HIGH TEMPERATURE; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INTERSTITIALS; MEDIUM TEMPERATURE; PHYSICAL RADIATION EFFECTS; QUANTITY RATIO; RADIATION DOSES; SURFACES; TEMPERATURE DEPENDENCE; TIME DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ENERGY RANGE; EV RANGE; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; IONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; POINT DEFECTS; RADIATION EFFECTS
Optional Information
- Notes
- Short note. For English translation see the journal Soviet Physics - Semiconductors (USA).