Published April 1997
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Ways of enhancing of radiation stable silicon by doping with the impurities of transition elements
- 1. Tashkentskij Gosudarstvennyj Univ., Nauchno-Issledovatel'skij Inst. Prikladnoj Fiziki, Tashkent(Uzbekistan)
Description
The effect of impurities of transition elements on the processes of radiation defect production was investigated by deep level transient spectroscopy. The possibility of enhancing the stability of silicon to the radiation was studied. (author)
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Additional details
Additional titles
- Original title (Russian)
- Способы повышения радиационной стойкости кремния введением примесей переходных элементов
Publishing Information
- Imprint Title
- Abstracts of the international scientific-practical conference on space research, technology and conversion-II
- Imprint Pagination
- 166 p.
- Journal Page Range
- p. 94
- Report number
- INIS-UZ--053
Conference
- Title
- International conference on space research, technology and conversion-II
- Dates
- 16-18 Apr 1997
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 29053421
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- A CENTERS; CRYSTAL DOPING; E CENTERS; GAMMA RADIATION; MANGANESE ADDITIONS; NICKEL ADDITIONS; PHYSICAL RADIATION EFFECTS
- Descriptors DEC
- COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; IONIZING RADIATIONS; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; VACANCIES
Optional Information
- Notes
- Imprint:Tezisy dokladov mezhdunarodnoj nauchno-prakticheskoj konferentsii: Kosmicheskie issledovaniya, tekhnologii i konversiya-II