Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+ and Be+ ion implantation

The activation kinetics and diffusion characteristics of Si+ and Be+ ions implanted into InAlAs and InGaAs were investigated for rapid thermal annealing in the temperature range 600--900 degree C. The apparent activation energies for electrical activation of Be are 0.43±0.03 eV in InAlAs and 0.38±0.03 eV in InGaAs, and for Si are 0.58±0.05 eV in InAlAs and 0.64±0.06 eV in InGaAs. Higher activation efficiencies are obtained for both dopants in InGaAs relative to InAlAs and anomalously low activation for low dose Be implants is observed due to a lack of vacant sites for the Be to occupy. Extensive redistribution of Be after annealing at 750 degree C, 10 s is observed in both materials, whereas Si shows no motion even for annealing at 850 degree C