Electronic transport in Thue-Morse gapped graphene superlattice under applied bias

Highlights: • The angular symmetry of the transmission coefficient is broken. • The zero-averaged wave-number gap can be modulated strongly. • A pronounced conductance valley is critically controlled. • The Fano factor forms a Poissonian value plateau. We investigate theoretically the electronic transport properties of Thue-Morse gapped graphene superlattice under an applied electric field. The results indicate that the combined effect of the band gap and the applied bias breaks the angular symmetry of the transmission coefficient. The zero-averaged wave-number gap can be greatly modulated by the band gap and the applied bias, but its position is robust against change of the band gap. Moreover, the conductance and the Fano factor are strongly dependent not only on the Fermi energy but also on the band gap and the applied bias. In the vicinity of the new Dirac point, the minimum value of the conductance obviously decreases and the Fano factor gradually forms a Poissonian value plateau with increasing of the band gap.