Published September 17, 2002 | Version v1
Journal article

Charge-density patching method for unconventional semiconductor binary systems

Description

Unconventional semiconductor alloys exhibit many unusual features and are under intensive studies recently. However, as initio methods cannot be applied directly to these systems due to their large sizes. In this work, a motif based charge patching method is introduced to generate the ab initio quality charge densities for these large systems. The resulting eigen energies are almost the same as the original ab initio eigen energies (with 20-50 meV errors)

Additional details

Publishing Information

Journal Title
Physical Review Letters
Journal Volume
88
Journal Issue
25
Journal Page Range
[v p.]
ISSN
0031-9007
CODEN
PRLTAO

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
34014711
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BINARY ALLOY SYSTEMS; CHARGE DENSITY; EIGENSTATES; LAWRENCE BERKELEY LABORATORY; SEMICONDUCTOR MATERIALS
Descriptors DEC
ALLOY SYSTEMS; MATERIALS; NATIONAL ORGANIZATIONS; US AEC; US DOE; US ERDA; US ORGANIZATIONS

Optional Information