Published September 17, 2002
| Version v1
Journal article
Charge-density patching method for unconventional semiconductor binary systems
Description
Unconventional semiconductor alloys exhibit many unusual features and are under intensive studies recently. However, as initio methods cannot be applied directly to these systems due to their large sizes. In this work, a motif based charge patching method is introduced to generate the ab initio quality charge densities for these large systems. The resulting eigen energies are almost the same as the original ab initio eigen energies (with 20-50 meV errors)
Additional details
Publishing Information
- Journal Title
- Physical Review Letters
- Journal Volume
- 88
- Journal Issue
- 25
- Journal Page Range
- [v p.]
- ISSN
- 0031-9007
- CODEN
- PRLTAO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 34014711
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BINARY ALLOY SYSTEMS; CHARGE DENSITY; EIGENSTATES; LAWRENCE BERKELEY LABORATORY; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ALLOY SYSTEMS; MATERIALS; NATIONAL ORGANIZATIONS; US AEC; US DOE; US ERDA; US ORGANIZATIONS
Optional Information
- Contract/Grant/Project number
- B and R KJ0102000; AC03-76SF00098
- Notes
- Journal Publication Date: 24 June 2002
- Funding organization
- USDOE Director, Office of Science. Office of Advanced Scientific Computing Research. Mathematical, Information, and Computational Sciences Division (United States)
- Secondary number(s)
- LBNL--49642