Published September 28, 2015
| Version v1
Journal article
Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy
Creators
- 1. Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)
- 2. Charles Bowden Laboratory, Army Aviation and Missile RD&E Center, Redstone Arsenal, Alabama 35898 (United States)
- 3. Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States)
- 4. CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy)
- 5. Department of Physics, Duke University, Durham, North Carolina 27708 (United States)
Description
Thin films of the wide bandgap quaternary semiconductor InxAlyGa(1−x−y)N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation
Additional details
Identifiers
- DOI
- 10.1063/1.4931942;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 107
- Journal Issue
- 13
- Journal Page Range
- p. 132102-132102.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47052148
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CARRIERS; DISLOCATIONS; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA; RECOMBINATION; RELAXATION; RESOLUTION; SEMICONDUCTOR MATERIALS; STRAINS; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ULTRAVIOLET RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; ELECTROMAGNETIC RADIATION; EMISSION; EPITAXY; FILMS; GALLIUM COMPOUNDS; LINE DEFECTS; LUMINESCENCE; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; RADIATIONS; SCATTERING; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC