Published October 2002
| Version v1
Journal article
Investigation on defects in the high temperature inorganic scintillation single crystals of Ce:YAlO3
- 1. Shanghai Inst. of Optics and Fine Mechanics, Shanghai (China)
- 2. Chinese Academy of Sciences, Beijing (China). Inst. of High Energy Physics
Description
The defects in Ce:YAlO3 single crystals grown by Czochralski method were investigated by transmission white beam synchrotron radiation topography method. It was shown in experiments that the growth striations, inclusions precipitations, twins, core and dislocation group were the main growth defects in Ce:YAP single crystals. The mechanism of the defects formation was also discussed. The results showed that the doped concentration, purity of starting materials and growth conditions are the main causes for defects formation in Ce:YAP single crystals
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 25
- Journal Issue
- 10
- Journal Page Range
- p. 869-872
- ISSN
- 0253-3219
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 34032811
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM OXIDES; CERIUM; CRYSTAL DEFECTS; CRYSTAL DOPING; CZOCHRALSKI METHOD; INORGANIC PHOSPHORS; MONOCRYSTALS; SYNCHROTRON RADIATION; YTTRIUM OXIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; BREMSSTRAHLUNG; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTS; METALS; OXIDES; OXYGEN COMPOUNDS; PHOSPHORS; RADIATIONS; RARE EARTHS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS