Published 1979 | Version v1
Journal article Metadata-only

Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

Creators

  • 1. Institute of Physical and Chemical Research, Wako, Saitama (Japan)
  • 2. Hitachi Ltd., Kokubunji, Tokyo (Japan). Central Research Lab.

Description

Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the 16O(3He, p)18F reaction. By 3He bobardment of samples properly arranged considering the 18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis. (author)

Additional details

Publishing Information

Journal Title
J. Radioanal. Chem.
Journal Volume
52
Journal Issue
2
Series
J. Radioanal. Chem.
Journal Page Range
449-459
ISSN
0134-0719

INIS

Country of Publication
Hungary
Country of Input or Organization
Hungary
INIS RN
11504526
Subject category
S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
CHARGED-PARTICLE ACTIVATION AN; EXPERIMENTAL DATA; FILMS; FLUORINE 18; GRAPHS; HELIUM 3 BEAMS; INTERFACES; ISOLATED VALUES; OXYGEN; QUANTITY RATIO; RECOILS; SILICON NITRIDES; SURFACES
Descriptors DEC
ACTIVATION ANALYSIS; BEAMS; BETA DECAY RADIOISOTOPES; BETA-PLUS DECAY RADIOISOTOPES; CHEMICAL ANALYSIS; DATA; DATA FORMS; ELEMENTS; FLUORINE ISOTOPES; HOURS LIVING RADIOISOTOPES; INFORMATION; ION BEAMS; ISOTOPES; LIGHT NUCLEI; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; NUCLEI; NUMERICAL DATA; ODD-ODD NUCLEI; RADIOISOTOPES; SILICON COMPOUNDS

Optional Information

Notes
11 refs.