MeV heavy ion induced recrystallization of buried silicon nitride layer: Role of energy loss processes

We report on MeV heavy ion beam induced epitaxial crystallization of a buried silicon nitride layer. Transmission electron micrographs and selected area diffraction patterns are used to study the recrystallization of an ion beam synthesized layer. We observe complete recrystallization of the silicon nitride layer having good quality interfaces with the top and substrate Si. Recrystallization is achieved at significantly lower temperatures of 100, 150, and 200 degree sign C for oxygen, silicon, and silver ions, respectively. The fact that recrystallization is achieved at the lowest temperature for the oxygen ions is discussed on the basis of the energy loss processes