Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation

Deep-level transient spectroscopy (DLTS) was used to investigate how temperature and in situ photoexcitation affect the creation of radiation-induced defect complexes in p-Si during low-dose ion implantation. Samples of p-Si were simultaneously irradiated by Ar+ ions accelerated to 150 keV in doses of 7x1010 cm-2 and photoexcited with ultraviolet light at temperatures of 300 and 600 K. It was found that nonradiative heating of the samples by the implanted ions increases the total concentration of defect complexes while simultaneously changing the nature of the dominant complex. In contrast, ultraviolet illumination of the semiconductor suppresses defect formation. It was observed that in situ photoexcitation has a progressively smaller effect on the formation of radiation-induced defect complexes as the target temperature increases. The dependence of the concentration of secondary defects created as the accelerated ions are incorporated into the p-Si on the UV illumination intensity is found to be nonmonotonic. The results obtained for p-Si were analyzed and compared with previously known data for n-Si