Published September 1997 | Version v1
Journal article Metadata-only

Radiation resistance of porous silicon

Creators

  • 1. RAN Fizicheskij Inst. im. P.N.Lebedeva, Moscow (Russian Federation)
  • 2. RAN Inst. Obshchej Fiziki, Moscow (Russian Federation)
  • 3. MGU im. M.V.Lomonosova, Fizicheskij fakul'tet, Moscow (Russian Federation)

Description

The radiation effect of Ar+ ions with 300 keV energies and 5x1014 - 1x1016 cm-2 doses on properties of porous silicon prepared by electrochemical method was studied. According to data of Raman scattering and photoluminescence it was shown that the radiation stability of porous silicon layers exceeds by far the radiation stability of a single crystal silicon

Additional details

Additional titles

Original title (Russian)
Радиационная стойкост' пористого кремния

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
31
Journal Issue
9
Journal Page Range
p. 1126-1129
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
29067299
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ARGON IONS; DEPTH; EMISSION SPECTRA; ION DENSITY; ION IMPLANTATION; KEV RANGE 100-1000; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; POROUS MATERIALS; RADIATION DOSES; RAMAN SPECTRA; SILICON; SPATIAL DISTRIBUTION; STABILITY
Descriptors DEC
CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELEMENTS; EMISSION; ENERGY RANGE; IONS; KEV RANGE; LUMINESCENCE; MATERIALS; PHOTON EMISSION; RADIATION EFFECTS; SEMIMETALS; SPECTRA

Optional Information

Notes
12 refs., 4 figs.