The ratio of the hole and electron exchange integrals in a CdMnSe/ZnSe diluted magnetic structure with quantum dots

Measurements of photoluminescence and resonance Raman scattering spectra of a CdMnSe/ZnSe structure with self-assembled quantum dots in magnetic fields up to 6 T in the Faraday and Voigt configurations show that the ratio of the valence- and conduction-band exchange integrals exceeds the known value for bulk CdMnSe by a factor of 1.5. This effect is attributed mainly to a decrease in the conduction-band exchange integral caused by a contribution from the kinetic s-d exchange mechanism, forbidden in the bulk.