Dependence of surface recombination velocity of InSb on temperature and α bombardment dose

The influence of temperature on surface recombination velocity S is studied by photomagnetoelectric measurements, for four specimens of n InSb before and after α particle bombardment at room temperature. A maximum is observed in all curves. The influence of dose on S is confirmed to be linear. We try to explain the observed maxima proposing a model for the position of energy levels E/sub t/ of the recombination centers into the energy gap at higher and lower values of temperature than its value T/sub o/ at which the observed maximum occurs